Electron-scattering states at solid surfaces calculated with realistic potentials
نویسندگان
چکیده
منابع مشابه
Electron scattering at single crystal Cu surfaces
Epitaxial copper layers, 6.6 nm to 1.2 μm thick, were grown on MgO(001) by ultra-high vacuum magnetron sputter deposition at 100 °C. The surface morphology, as determined by in-situ scanning tunneling microscopy, exhibits a regular mound structure. The mounds grow in width w and height h as a function of layer thickness t from h=3 nm and w=20 nm for t=20 nm to h=5 nm and w=200 nm for t=1.2 μm. ...
متن کاملComparison of Electron Elastic-Scattering Cross Sections Calculated from Two Commonly Used Atomic Potentials
We have analyzed differential cross sections ~DCSs! for the elastic scattering of electrons by neutral atoms that have been derived from two commonly used atomic potentials: the Thomas–Fermi–Dirac ~TFD! potential and the Dirac–Hartree–Fock ~DHF! potential. DCSs from the latter potential are believed to be more accurate. We compared DCSs for six atoms ~H, Al, Ni, Ag, Au, and Cm! at four energies...
متن کاملSpecular electron scattering at single-crystal Cu„001... surfaces
Epitaxial copper layers, 20 nm to 1.5m-thick, were grown on MgO 001 by ultrahigh vacuum magnetron sputter deposition at 80 °C. In situ electrical resistivity measurements indicate partial specular scattering at the Cu vacuum interface with a Fuchs–Sondheimer scattering parameter p =0.6 0.1. In situ deposition of 0.3 to 7.0-nm-thick Ta cap layers on the Cu surfaces leads to a resistivity increas...
متن کاملElectron scattering at steps: image-potential states on Cu(119).
The dynamics of image-potential states on Cu(119) have been studied with two-photon photoemission. Direction-dependent quasielastic scattering processes with large momentum transfer are attributed to the finite terrace-width distribution on the stepped surface. This effectively couples image-potential states via interband scattering and leads to an asymmetry of the decay rate. Electrons in the ...
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ژورنال
عنوان ژورنال: Physical Review B
سال: 1997
ISSN: 0163-1829,1095-3795
DOI: 10.1103/physrevb.55.r13432